Evidence for erbium-erbium energy migration in erbium(III) bis(perfluoro-p-tolyl)phosphinate
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منابع مشابه
Energy backtransfer and infrared photoresponse in erbium-doped silicon p-n diodes
Temperature-dependent measurements of the photoluminescence ~PL! intensity, PL lifetime, and infrared photocurrent, were performed on an erbium-implanted silicon p – n junction in order to investigate the energy transfer processes between the silicon electronic system and the Er 4 f energy levels. The device features excellent light trapping properties due to a textured front surface and a high...
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The exponent P that describes the sinusoidally modulate d * paramagnetic phase transition crosses over from a value of 0.39 near TN to a mean field value away from TN. Electrical resistivity measurements near TN are given for the c axis and the critical behaviour is discussed. Erbium orders below its NBel temperature TN= 85 K with its spins directed along the c axis of the hcp crystal and with ...
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As in bulk amplifiers, the onset of nonlinear effects when amplifying ultra-short pulses in fiber amplifiers has been pointed out and investigated by several groups, specifically in erbium-doped fiber amplifiers ( EDFAs) [ l-3 1. Researchers have in fact used the Kerr nonlinearity in conjunction with group velocity dispersion in order to create even shorter pulses via higher-order soliton forma...
متن کاملLayout Optimization for Erbium-Doped Waveguide Amplifiers
The optical layout of erbium-doped waveguide amplifiers (EDWAs) based on spiral and folded spiral planar lightwave circuits is considered. It is shown that layouts may be ranked according to their ability to provide maximum gain within a given chip area and an optimum layout based on a spiral containing both straight and curved waveguide sections is identified from an initial set. The analysis ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2896105